SSM3J168F,LFDescription Description_SSM3J168F,LFSpecifications_Toshiba Semiconductor and Storage-www.samsong.com

MOSFETs - Single

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In Stock：11,076(Ref. price)

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1	$0.37830	$0.37830

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Specifications

Description	Details
Series	U-MOSVI
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 10 V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	82 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	S-Mini
Package / Case	TO-236-3, SC-59, SOT-23-3

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