TK40P04M1(T6RSS-Q)Description Description_TK40P04M1(T6RSS-Q)Specifications_Toshiba Semiconductor and Storage-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSVI-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1920 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	47W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DP
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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