IMW120R350M1HXKSA1Description Description_IMW120R350M1HXKSA1Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	CoolSiC™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1.2 kV
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	455mOhm @ 2A, 18V
Vgs(th) (Max) @ Id	5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.3 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	182 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3

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