BSL302SNH6327XTSA1Description Description_BSL302SNH6327XTSA1Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	OptiMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id	2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	6.6 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSOP-6-6
Package / Case	SOT-23-6 Thin, TSOT-23-6

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