IRFBL3703Description Description_IRFBL3703Specifications_Infineon Technologies-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 76A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	209 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8250 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 300W (Tc)
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	SUPER D2-PAK
Package / Case	Super D2-Pak

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