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MOSFETs - Single
IPI086N10N3GXKSA1 Picture

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IPI086N10N3GXKSA1

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In Stock:2,050(Ref. price)
Qty.Unit PriceExt. Price
1
$1.55820
$1.55820
Documents
Specifications
DescriptionDetails
Series
OptiMOS™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id
3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Other
Price advantage, IPI086N10N3GXKSA1 is available in stock and can be delivered on the same day
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