NTP8G206NGDescription Description_NTP8G206NGSpecifications

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,892(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 8V
Vgs(th) (Max) @ Id	2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 4.5 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 480 V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

Other

Price advantage, NTP8G206NG is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
SIHG22N60EF-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 19A TO247AC	$4.40550	In Stock:749
2SK3712(1)-AZ	Renesas Electronics America Inc	MOSFETs - Single	Datasheet	SMALL SIGNAL N-CHANNEL MOSFET	$2.86080	In Stock:1387
G3R450MT17D	GeneSiC Semiconductor	MOSFETs - Single	Datasheet	SIC MOSFET N-CH 9A TO247-3	$6.45120	In Stock:748
2SK2372(2)-A	Renesas Electronics America Inc	MOSFETs - Single	Datasheet	DISCRETE / POWER MOSFET	$5.41440	In Stock:505
2SK2364(1)-AZ	Renesas Electronics America Inc	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$3.65540	In Stock:493