IRLML5203Description Description_IRLML5203Specifications_Infineon Technologies-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	98mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	Micro3™/SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

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