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IPP65R190C7FKSA1 Picture

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IPP65R190C7FKSA1

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In Stock:3,174(Ref. price)
Qty.Unit PriceExt. Price
1
$3.14580
$3.14580
Documents
Specifications
DescriptionDetails
Series
CoolMOS™ C7
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
72W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Other
Price advantage, IPP65R190C7FKSA1 is available in stock and can be delivered on the same day
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