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MOSFETs - Single
IRF8010PBF Picture

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IRF8010PBF

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In Stock:1,786(Ref. price)
Qty.Unit PriceExt. Price
1
$1.91090
$1.91090
Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3830 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
260W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Other
Price advantage, IRF8010PBF is available in stock and can be delivered on the same day
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