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TPH3206LDG-TR

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  • GANFET N-CH 600V 17A 3PQFN
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In Stock:19,588(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tray
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V
Rds On (Max) @ Id, Vgs
180mOhm @ 11A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 480 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN
Other
Price advantage, TPH3206LDG-TR is available in stock and can be delivered on the same day
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