RQJ0303PGDQA#H6Description Description_RQJ0303PGDQA#H6Specifications_Renesas Electronics America Inc-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	68mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	625 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-MPAK
Package / Case	TO-236-3, SC-59, SOT-23-3

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