RJK60S5DPE-00#J3Description Description_RJK60S5DPE-00#J3Specifications_Renesas Electronics America Inc-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	178mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1.6 pF @ 25 V
FET Feature	Super Junction
Power Dissipation (Max)	125W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-LDPAK
Package / Case	SC-83

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