SCTH70N120G2V-7Description Description_SCTH70N120G2V-7Specifications

MOSFETs - Single

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In Stock：19,422(Ref. price)

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 kV
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id	4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3540 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	469W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	H2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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