TK3R1E04PL,S1XDescription Description_TK3R1E04PL,S1XSpecifications_Toshiba Semiconductor and Storage-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSIX-H
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 30A, 4.5V
Vgs(th) (Max) @ Id	2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	63.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4670 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	87W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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