TK10V60W,LVQDescription Description_TK10V60W,LVQSpecifications_Toshiba Semiconductor and Storage-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	DTMOSIV
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
FET Feature	Super Junction
Power Dissipation (Max)	88.3W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-DFN-EP (8x8)
Package / Case	4-VSFN Exposed Pad

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