KGF12N05-400-SPDescription Description_KGF12N05-400-SPSpecifications_Renesas Electronics America Inc-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	5.5 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3.5V, 4.5V
Rds On (Max) @ Id, Vgs	2.4mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 3.5 V
Vgs (Max)	±5.5V
Input Capacitance (Ciss) (Max) @ Vds	940 pF @ 5.5 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WLCSP (1.47x1.47)
Package / Case	6-SMD, No Lead

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