NTBG080N120SC1Description Description_NTBG080N120SC1Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 20 V
Vgs (Max)	+25, -15V
Input Capacitance (Ciss) (Max) @ Vds	1154 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	179W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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