SSM6J507NU,LFDescription Description_SSM6J507NU,LFSpecifications_Toshiba Semiconductor and Storage-www.samsong.com

MOSFETs - Single

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In Stock：20,483(Ref. price)

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Specifications

Description	Details
Series	U-MOSVI
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20.4 nC @ 4.5 V
Vgs (Max)	+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-UDFNB (2x2)
Package / Case	6-WDFN Exposed Pad

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