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MOSFETs - Single
TK100L60W,VQ Picture

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TK100L60W,VQ

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In Stock:1,140(Ref. price)
Qty.Unit PriceExt. Price
1
$32.78880
$32.78880
Documents
Specifications
DescriptionDetails
Series
DTMOSIV
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
360 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
15000 pF @ 30 V
FET Feature
Super Junction
Power Dissipation (Max)
797W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P(L)
Package / Case
TO-3PL
Other
Price advantage, TK100L60W,VQ is available in stock and can be delivered on the same day
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