IPW90R120C3XKSA1Description Description_IPW90R120C3XKSA1Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	CoolMOS™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	3.5V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6800 nF @ 100 V
FET Feature	-
Power Dissipation (Max)	417W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3

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