TQM110NB04CR RLGDescription Description_TQM110NB04CR RLGSpecifications_Taiwan Semiconductor Corporation-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1352 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	8-PDFNU (5x6)
Package / Case	8-PowerTDFN

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