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MOSFETs - Single
TK35A08N1,S4X Picture

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TK35A08N1,S4X

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In Stock:1,200(Ref. price)
Qty.Unit PriceExt. Price
1
$1.08900
$1.08900
Documents
Specifications
DescriptionDetails
Series
U-MOSVIII-H
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12.2mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id
4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Other
Price advantage, TK35A08N1,S4X is available in stock and can be delivered on the same day
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