SI3139KL3-TPDescription Description_SI3139KL3-TPSpecifications

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	500mOhm @ 150mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	113 pF @ 16 V
FET Feature	-
Power Dissipation (Max)	100mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006-3
Package / Case	SC-101, SOT-883

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