C3M0015065KDescription Description_C3M0015065KSpecifications

MOSFETs - Single

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Specifications

Description	Details
Series	C3M™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	21mOhm @ 55.8A, 15V
Vgs(th) (Max) @ Id	3.6V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs	188 nC @ 15 V
Vgs (Max)	+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds	5011 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	416W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4

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