RJK5035DPP-A0#T2Description Description_RJK5035DPP-A0#T2Specifications_Renesas Electronics America Inc-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.6Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	29W (Ta)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220FP
Package / Case	TO-220-3 Full Pack

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