SIJ800DP-T1-GE3Description Description_SIJ800DP-T1-GE3Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	4.2W (Ta), 35.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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