IXFR10N100QDescription Description_IXFR10N100QSpecifications

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,062(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	HiPerFET™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS247™
Package / Case	ISOPLUS247™

Other

Price advantage, IXFR10N100Q is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
TPHR9203PL,L1Q	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 150A 8SOP	$1.86200	In Stock:2844
IPB020NE7N3GATMA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 75V 120A D2PAK	$5.72220	In Stock:2069
IRF6715MTR1PBF	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 25V 34A DIRECTFET	No price	In Stock:18838
IXFN23N100	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 1000V 23A SOT-227B	No price	In Stock:18842
RW1A030APT2CR	Rohm Semiconductor	MOSFETs - Single	Datasheet	MOSFET P-CH 12V 3A 6WEMT	$0.45080	In Stock:3287