RM17N800T2Description Description_RM17N800T2Specifications

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,346(Ref. price)

Qty.	Unit Price	Ext. Price
1	$1.45350	$1.45350

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	320mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2060 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	260W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

Other

Price advantage, RM17N800T2 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
SIA449DJ-T1-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET P-CH 30V 12A PPAK SC70-6	$0.46080	In Stock:13863
IRLR3103PBF	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 55A DPAK	No price	In Stock:18522
IRFS77347PPBF	International Rectifier	MOSFETs - Single	Datasheet	MOSFET N-CH 75V 197A D2PAK	$1.26350	In Stock:18524
IRF123	International Rectifier	MOSFETs - Single	Datasheet	N-CHANNEL HERMETIC MOS HEXFET	$0.61110	In Stock:2384
IPC60R160C6UNSAWNX6SA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH BARE DIE	No price	In Stock:18528