R6015KNZC8Description Description_R6015KNZC8Specifications

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,126(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	290mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	27.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1050 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PF
Package / Case	TO-3P-3 Full Pack

Other

Price advantage, R6015KNZC8 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IXFN24N100F	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 1000V 24A SOT227B	No price	In Stock:20240
AUIRFU4292	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N CH 250V 9.3A IPAK	No price	In Stock:20246
IXFQ60N50P3	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 500V 60A TO3P	$7.81820	In Stock:20248
BSP316PE6327T	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET P-CH 100V 680MA SOT223-4	No price	In Stock:20250
IPC60R037P7X7SA1	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH HI POWER WAFER	No price	In Stock:20254