TT8U1TRDescription Description_TT8U1TRSpecifications_Rohm Semiconductor-www.samsong.com

MOSFETs - Single

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In Stock：6,748(Ref. price)

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	105mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	6.7 nC @ 4.5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSST
Package / Case	8-SMD, Flat Lead

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