2SK3662(F)Description Description_2SK3662(F)Specifications_Toshiba Semiconductor and Storage-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSIII
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	12.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5120 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220NIS
Package / Case	TO-220-3 Full Pack

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