IMBG120R030M1HXTMA1Description Description_IMBG120R030M1HXTMA1Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	CoolSiC™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1.2 kV
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	41mOhm @ 25A, 18V
Vgs(th) (Max) @ Id	5.7V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 18 V
Vgs (Max)	+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds	2.29 nF @ 800 V
FET Feature	Standard
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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