G3R160MT17DDescription Description_G3R160MT17DSpecifications

MOSFETs - Single

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In Stock：1,158(Ref. price)

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Specifications

Description	Details
Series	G3R™
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	208mOhm @ 12A, 15V
Vgs(th) (Max) @ Id	2.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 15 V
Vgs (Max)	±15V
Input Capacitance (Ciss) (Max) @ Vds	1272 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	175W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

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