IPB039N10N3GE8187ATMA1Description Description_IPB039N10N3GE8187ATMA1Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	OptiMOS™
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 160µA
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8410 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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