BSD816SNH6327Description Description_BSD816SNH6327Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id	950mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs	600 pC @ 2.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT363-6
Package / Case	6-VSSOP, SC-88, SOT-363

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