STR2N2VH5Description Description_STR2N2VH5Specifications

MOSFETs - Single

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Specifications

Description	Details
Series	STripFET™ V
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	30mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	367 pF @ 16 V
FET Feature	-
Power Dissipation (Max)	350mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

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