94-3250Description Description_94-3250Specifications_Infineon Technologies-www.samsong.com

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 7V
Rds On (Max) @ Id, Vgs	11.5mOhm @ 12A, 7V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2270 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ MQ
Package / Case	DirectFET™ Isometric MQ

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