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MOSFETs - Single
IPU64CN10N G Picture

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IPU64CN10N G

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In Stock:17,060(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
OptiMOS™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
64mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
569 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
44W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Other
Price advantage, IPU64CN10N G is available in stock and can be delivered on the same day
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