VS-GB200TH120NDescription Description_VS-GB200TH120NSpecifications_Vishay General Semiconductor

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,668(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	360 A
Power - Max	1136 W
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 200A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	14.9 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 4)
Supplier Device Package	Double INT-A-PAK

Other

Price advantage, VS-GB200TH120N is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FB30R06W1E3BOMA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	FB30R06 - IGBT MODULE	$23.96790	In Stock:19052
CM150TU-12F	Powerex Inc.	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 600V 150A 520W	No price	In Stock:19058
FF900R12IE4VPBOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 900A 20MW	$738.41038	In Stock:19060
APT75GN120JDQ3G	Microsemi Corporation	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 124A 379W ISOTOP	No price	In Stock:19064
FS200R12KT4RB11BOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 280A 1000W	$241.67810	In Stock:19066