VS-GB200TH120UDescription Description_VS-GB200TH120USpecifications_Vishay General Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	330 A
Power - Max	1316 W
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 200A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	16.9 nF @ 30 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 4)
Supplier Device Package	Double INT-A-PAK

Other

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