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Transistors - IGBTs - Modules
BSM50GD120DN2E3226BOSA1 Picture

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BSM50GD120DN2E3226BOSA1

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In Stock:17,206(Ref. price)
Qty.Unit PriceExt. Price
1
$157.27636
$157.27636
Documents
Specifications
DescriptionDetails
Series
-
Package
Tray
IGBT Type
-
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
50 A
Power - Max
350 W
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 50A
Current - Collector Cutoff (Max)
1 mA
Input Capacitance (Cies) @ Vce
3.3 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Other
Price advantage, BSM50GD120DN2E3226BOSA1 is available in stock and can be delivered on the same day
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