BSM50GD120DN2E3226BOSA1Description Description_BSM50GD120DN2E3226BOSA1Specifications

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,206(Ref. price)

Qty.	Unit Price	Ext. Price
1	$157.27636	$157.27636

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Power - Max	350 W
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 50A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	3.3 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, BSM50GD120DN2E3226BOSA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
APTGF15H120T1G	Microsemi Corporation	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 25A 140W SP1	No price	In Stock:17556
FZ800R33KL2CB5NOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 3300V 1500A 9800W	No price	In Stock:17558
APTGT225A170G	Microchip Technology	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1700V 340A 1250W SP6	$252.74749	In Stock:17560
APTGF75DA120T1G	Microsemi Corporation	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 100A 500W SP1	No price	In Stock:17562
FF450R12ME4PBOSA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE 1200V 450A	$206.05025	In Stock:17564