VS-GP300TD60SDescription Description_VS-GP300TD60SSpecifications_Vishay General Semiconductor

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	PT, Trench
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	580 A
Power - Max	1136 W
Vce(on) (Max) @ Vge, Ic	1.45V @ 15V, 300A
Current - Collector Cutoff (Max)	150 µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Dual INT-A-PAK (3 + 8)
Supplier Device Package	Dual INT-A-PAK

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