FID60-06DDescription Description_FID60-06DSpecifications

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	65 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
Power - Max	200 W
Switching Energy	1mJ (on), 1.4mJ (off)
Input Type	Standard
Gate Charge	120 nC
Td (on/off) @ 25°C	-
Test Condition	300V, 30A, 22Ohm, 15V
Reverse Recovery Time (trr)	70 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	i4-Pac™-5
Supplier Device Package	ISOPLUS i4-PAC™

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