MMIX1Y100N120C3H1Description Description_MMIX1Y100N120C3H1Specifications

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	92 A
Current - Collector Pulsed (Icm)	440 A
Vce(on) (Max) @ Vge, Ic	3.5V @ 15V, 100A
Power - Max	400 W
Switching Energy	6.5mJ (on), 2.9mJ (off)
Input Type	Standard
Gate Charge	270 nC
Td (on/off) @ 25°C	48ns/123ns
Test Condition	600V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)	420 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Supplier Device Package	24-SMPD

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