RJP65T54DPM-E0#T2Description Description_RJP65T54DPM-E0#T2Specifications_Renesas Electronics America Inc-www.samsong.com

Transistors - IGBTs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,330(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	225 A
Vce(on) (Max) @ Vge, Ic	1.68V @ 15V, 30A
Power - Max	63.5 W
Switching Energy	330µJ (on), 760µJ (off)
Input Type	Standard
Gate Charge	72 nC
Td (on/off) @ 25°C	35ns/120ns
Test Condition	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PFM, SC-93-3
Supplier Device Package	TO-3PF

Other

Price advantage, RJP65T54DPM-E0#T2 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IXGK100N170	IXYS	Transistors - IGBTs - Single	Datasheet	IGBT PT 1000V 120A TO-264	$35.79840	In Stock:20270
IGZ100N65H5	Infineon Technologies	Transistors - IGBTs - Single	Datasheet	IGZ100N65 - DISCRETE IGBT WITHOU	$3.18160	In Stock:20272
FGB40T65SPD-F085	ON Semiconductor	Transistors - IGBTs - Single	Datasheet	IGBT FIELD STOP 650V 80A D2PAK	$3.92040	In Stock:20276
RGTVX2TS65DGC11	Rohm Semiconductor	Transistors - IGBTs - Single	Datasheet	650V 60A FIELD STOP TRENCH IGBT	$6.44160	In Stock:20278
TIG058E8-TL-H	ON Semiconductor	Transistors - IGBTs - Single	Datasheet	INSULATED GATE BIPOLAR TRANSISTO	$0.30380	In Stock:650614