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Transistors - IGBTs - Single
RJP65T54DPM-E0#T2 Picture

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RJP65T54DPM-E0#T2

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In Stock:17,330(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
IGBT Type
Trench
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
225 A
Vce(on) (Max) @ Vge, Ic
1.68V @ 15V, 30A
Power - Max
63.5 W
Switching Energy
330µJ (on), 760µJ (off)
Input Type
Standard
Gate Charge
72 nC
Td (on/off) @ 25°C
35ns/120ns
Test Condition
400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3PFM, SC-93-3
Supplier Device Package
TO-3PF
Other
Price advantage, RJP65T54DPM-E0#T2 is available in stock and can be delivered on the same day
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