HGTD3N60C3S9ADescription Description_HGTD3N60C3S9ASpecifications

Transistors - IGBTs - Single

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In Stock：12,021(Ref. price)

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	6 A
Current - Collector Pulsed (Icm)	24 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 3A
Power - Max	33 W
Switching Energy	85µJ (on), 245µJ (off)
Input Type	Standard
Gate Charge	10.8 nC
Td (on/off) @ 25°C	-
Test Condition	480V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252AA

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