RJH65T04BDPMA0#T2FDescription Description_RJH65T04BDPMA0#T2FSpecifications_Renesas Electronics America Inc-www.samsong.com

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 30A
Power - Max	65 W
Switching Energy	360µJ (on), 350µJ (off)
Input Type	Standard
Gate Charge	74 nC
Td (on/off) @ 25°C	35ns/115ns
Test Condition	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)	80 ns
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	SC-94
Supplier Device Package	TO-3PFP

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