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Transistors - IGBTs - Single
APT50GP60B2DQ2G Picture

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APT50GP60B2DQ2G

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In Stock:18,790(Ref. price)
Qty.Unit PriceExt. Price
1
$11.31450
$11.31450
Documents
Specifications
DescriptionDetails
Series
POWER MOS 7®
Package
Tube
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
150 A
Current - Collector Pulsed (Icm)
190 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 50A
Power - Max
625 W
Switching Energy
465µJ (on), 635µJ (off)
Input Type
Standard
Gate Charge
165 nC
Td (on/off) @ 25°C
19ns/85ns
Test Condition
400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Supplier Device Package
-
Other
Price advantage, APT50GP60B2DQ2G is available in stock and can be delivered on the same day
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