IXYH75N120B4Description Description_IXYH75N120B4Specifications

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	XPT™, GenX4™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	240 A
Current - Collector Pulsed (Icm)	440 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 75A
Power - Max	1150 W
Switching Energy	4.5mJ (on), 2.7mJ (off)
Input Type	Standard
Gate Charge	157 nC
Td (on/off) @ 25°C	22ns/182ns
Test Condition	600V, 50A, 3Ohm, 15V
Reverse Recovery Time (trr)	66 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD

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